Redefining h-BN Synthesis: Novel Precursor Pathways on Ni(111) Surfaces

• Sergi Campos-Jara (Leiden University)

Date

Friday 25 October 2024

Time

10:15 - 10:45 hour

Address

Gorlaeus Building
Einsteinweg 55
2333 CC Leiden

Room

BM.1.23

Sergi Campos-Jara^a, Tycho Roorda^a, Laurens P.M. de Jong^a, Vladyslav Virchenko^a, Andy Jiao^a, Mauricio J. Prieto^b, Liviu C. Tanase^b, Jing-Wen Hsueh^b, Vladimir Calvi^a,c, Jetse van Os^a, Núria Félez-Guerrero^a, Rick Monsma^a, Richard v. Rijn^c, Thomas Schmidt^b, Grégory Schneider^a, and Irene M.N. Groot^∗a,

^a Leiden Institute of Chemistry, Leiden University, Einsteinweg 55, Leiden, 2333 CC, The Netherlands
^b Department of Interface Science, Fritz-Haber-nstitute der Max-Plank-Gesellschaft, Fradayweg 4-6, Berlin, 14195, Germany
^c Applied Nanolayers, Delft University of Technology, Feldmanweg 17, Delft, 2638 CT, The Netherlands

Abstract

Since the discovery of graphene by A. Geim and K. Novoselov in 2004 [1], a wide range of two-dimensional (2D) materials for a wide range of applications has been researched.[2] Hexagonal boron nitride (h-BN) is known for its unique chemical and physical properties. Its insulating behaviour (5-6 eV of bandgap) and its resistance to oxygen combined with its outstanding mechanical properties make h-BN interesting for electronic and materials applications.[3] Here we investigated the synthesis of single-crystalline h-BN using low-temperature chemical vapour deposition (CVD) on a Ni(111) single crystal and thin film. Figure 1 (left) shows a post-growth low-energy electron diffraction (LEED) pattern where only the (111) structure is visible. In addition, the N1s core-level spectrum shown in Figure 1 (centre) demonstrates the formation of B-N bonds indicating the formation of h-BN. This is ultimately supported by the atomic-resolution scanning tunnelling microscopy (STM) image shown in Figure 1 (right) of the post-grown h-BN showing the honeycomb structure of h-BN.

Figure 1. (left) LEED image taken at 42 eV of the h-BN/Ni(111) surface, showing single crystallinity of the (111) structure. (centre) N1s core-level spectrum taken at hν = Al kα. The spectrum shows a clear formation of B-N bonds. (right) Atomic-resolution STM image of the h-BN grown on Ni(111), showing a clear honeycomb structure on top of the Ni surface

Acknowledgements

The authors acknowledge funding from the European Union’s Horizon 2020 Research and Innovation programme under the Marie Skłodowska-Curie initiative entitled STiBNite, No 956923.

References

1. K.S. Novoselov et al., Electric field effect tin Atomically Thin Carbon Films. Science. 2004, 306, 666-669.
2. U. Sundararaju et al., MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector. Materials, 2021, 14, 1672-1706.
3. J.Wang et al., Electrical Properties and Applications of Graphene, hexagonal Boron Nitride (h-BN) and graphene/h-BN heterostructures. Mat. Tod. Phys. 2017, 2, 6-34.